Direct and highly sensitive measurement of defect-related absorption in amorphous silicon thin films by cavity ringdown spectroscopy

Applied Physics Letters

Volumn 84, Issue 16, 2004, Pages 3079-3081

  Aarts, I M P ^a   Hoex, B ^a   Smets, A H M ^a   Engeln, R ^a   Kessels, W M M ^a   Van de Sanden, M C M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; DATA ACQUISITION; HYDROGENATION; LIGHT ABSORPTION; LIGHT SCATTERING; NEODYMIUM LASERS; OPTICAL PARAMETRIC OSCILLATORS; PHOTODIODES; PHOTOMULTIPLIERS; PHOTONS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SURFACE ROUGHNESS;

CAVITY LOSS; CAVITY RINGDOWN SPECTROSCOPY; FRESNEL COEFFICIENTS; SCATTERING ANGLES;

THIN FILMS;

EID: 2442684203     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1713047     Document Type: Article

References (19)

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