Structural and optical analysis of epitaxial GaN on sapphire

Semiconductor Science and Technology

Volumn 12, Issue 5, 1997, Pages 637-644

  Strauss U ^a,c   Tews, H ^a   Riechert, H ^a   Averbeck, R ^a   Schienle, M ^a   Jobst, B ^a   Volm, D ^b   Streibl, T ^b   Meyer, B K ^b,d   Ruhle W W ^c,e  

^a SIEMENS AG   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d JUSTUS LIEBIG UNIVERSITY   (Germany)

^e PHILIPPS UNIVERSITY MARBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYSTAL STRUCTURE; DENSITY (OPTICAL); EPITAXIAL GROWTH; LIGHT EMISSION; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; X RAY DIFFRACTION;

CUBIC DONOR ACCEPTOR RECOMBINATION; EMISSION BAND; OPTICAL ANALYSIS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 2442554886     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/5/019     Document Type: Article

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