Domain growth of Si(111)-5 × 2 Au by high-temperature STM

Surface Science

Volumn 357-358, Issue , 1996, Pages 858-862

  Hasegawa, Tsuyoshi ^a   Hosaka, Sumio ^a   Hosoki, Shigeyuki ^a  

^a HITACHI LTD   (Japan)

Author keywords

Gold; Growth; Scanning tunneling microscopy; Silicon; Surface structure

Indexed keywords

EPITAXIAL GROWTH; GOLD; HEATING; HIGH TEMPERATURE APPLICATIONS; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

DOMAIN BOUNDARY; RECONSTRUCTION;

SURFACE PHENOMENA;

EID: 0030173212     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00278-6     Document Type: Article

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