Switching time of nanowire memory

Journal of Nanoscience and Nanotechnology

Volumn 5, Issue 5, 2005, Pages 753-758

  Varfolomeev, A ^a   Pokalyakin, V ^b   Tereshin, S ^b   Zaretsky, D ^a   Bandyopadhyay, S ^c  

^a KURCHATOV INSTITUTE   (Russian Federation)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

^c Virginia Commonwealth University   (United States)

Author keywords

Nanowires; Self Assembly; Static Memory

Indexed keywords

CONDUCTANCE STATE; NANOWIRES; STATIC MEMORY;

ALUMINA; ANODES; ELECTRIC CONDUCTIVITY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; THIN FILMS;

NONVOLATILE STORAGE;

CADMIUM DERIVATIVE; CADMIUM SULFIDE; NANOTUBE; SULFIDE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRICITY; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT; EQUIPMENT DESIGN; EVALUATION; INFORMATION RETRIEVAL; INSTRUMENTATION; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; NANOTECHNOLOGY; SIGNAL PROCESSING; TIME; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC WIRING; ELECTROCHEMISTRY; ELECTRONICS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INFORMATION STORAGE AND RETRIEVAL; MATERIALS TESTING; MICROELECTRODES; NANOTECHNOLOGY; NANOTUBES; SIGNAL PROCESSING, COMPUTER-ASSISTED; SULFIDES; TIME FACTORS;

EID: 24144501309     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2005.105     Document Type: Article

References (4)

1. N. Kouklin, S. Bandyopadhyay, S. Tereshin, A. Varfolomeev, and D. Zaretsky, Appl. Phys. Lett. 76, 460 (2000).
2. S. Bandyopadhyay, N. Kouklin, and L. Menon, in Quantum Dots and Nanowires, edited by S. Bandyopadhyay and H. S. Nalwa, American Scientific Publishers, Stevenson Ranch, CA (2003), Chapter 9.
3. V. Pokalyakin, S. Tereshin, A. Varfolomeev, D. Zaretsky, A. Baranov, A. Benerjee, and S. Bandyopadhyay (unpublished).
4. H. Benisty, C. M. Sotomayor-Torres, and C. Weisbuch, Phys. Rev. B 44, 10945 (1991).