Nature and energy structure of impurity and intrinsic defects in V-doped Cd1-xHgxTe

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 378-388

  Gnatenko, Yu P ^a   Faryna, I O ^a   Bukivskij, P M ^a   Shigiltchoff, O A ^a   Gamernyk, R V ^b   Paranchych, S Yu ^c  

^a INSTITUTE OF PHYSICS   (Ukraine)

^b IVAN FRANKO NATIONAL UNIVERSITY OF LVIV   (Ukraine)

^c CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DEFECTS; ELECTRON ENERGY LEVELS; IMPURITIES; LIGHT ABSORPTION; SEMICONDUCTOR GROWTH;

BRIDGMAN TECHNIQUE; ENERGY STRUCTURE; INTRINSIC DEFECTS; PHOTOINDUCED IMPURITY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 24144490006     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/010     Document Type: Article

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