Effects of prolonged annealing on NiSi at low temperature (500°C)

Journal of Electronic Materials

Volumn 34, Issue 8, 2005, Pages 1110-1114

  Anisur, Md Rahman ^a   Osipowicz, T ^a   Chi, D Z ^b   Wang, W D ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Agglomeration; Interface roughness; Nickel monosilicide (NiSi); Prolonged annealing; Thermal stability

Indexed keywords

AGGLOMERATION; ANNEALING; LOW TEMPERATURE EFFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; THIN FILMS; X RAY DIFFRACTION;

ANNEALING TIME; INTERFACE ROUGHNESS; NICKEL MONOSILICIDE (NISI); PROLONGED ANNEALING;

NICKEL COMPOUNDS;

EID: 24144484230     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0238-7     Document Type: Article

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