Growth and characterization of GaAs/AlGaAs thue-morse quasicrystal photonic bandgap structures

Chinese Physics Letters

Volumn 22, Issue 5, 2005, Pages 1191-1194

  Zhang, Yong Gang ^a   Jiang, Xun Ya ^a   Zhu, Cheng ^a   Gu, Yi ^a   Li, Ai Zhen ^a   Qi, Ming ^a   Feng, Song Lin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GAS SOURCE MOLECULAR BEAM EPITAXY; III-V SEMICONDUCTORS; PHOTONIC DEVICES; QUASICRYSTALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; TRANSFER MATRIX METHOD;

APERIODIC SYSTEMS; DETERMINISTICS; GAAS/ALGAAS; GAS-SOURCE MOLECULAR BEAM EPITAXY; III/V SEMICONDUCTORS; ONE-DIMENSIONAL QUASICRYSTALS; PHOTONIC BAND GAP PROPERTIES; THUE-MORSE; THUE-MORSE SEQUENCE; X RAY MEASUREMENTS;

GALLIUM ARSENIDE;

EID: 24144478476     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/5/046     Document Type: Article

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