High power, drift-free 4H-SiC PiN diodes

International Journal of High Speed Electronics and Systems

Volumn 14, Issue 3, 2004, Pages 860-864

  Das, Mrinal K ^a   Sumakeris, Joseph J ^a   Hull, Brett A ^a   Richmond, Jim ^a   Krishnaswami, Sumi ^a   Powell, Adrian R ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DISLOCATIONS (CRYSTALS); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; HYDROGEN; MICROPROCESSOR CHIPS; SILICON CARBIDE;

BASAL PLANES; DIODE CHIPS; PULSED CURRENT; REVERSE BLOCKING CAPABILITY;

SEMICONDUCTOR DIODES;

EID: 24144467461     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156404002958     Document Type: Conference Paper

References (4)

1. M.K. Das: Latest Advances in 4H-SiC PiN and MOS Power Devices (International Semiconductor Device Research Symposium, Washington, DC, December 2003).
2. H. Lendenmann, F. Dahlquist, J.P. Bergman, H. Bleichner and C. Hallin, Mater. Sci. Forum, Vol. 389-393 (2002) p. 1259.
3. J.J. Sumakeris, M.K. Das, H.M. Hobgood, S.G. Mueller, M.J. Paisley, J.W. Palmour, and C.H. Carter, Jr.: Mater. Sci. Forum, Vol. 457-460 (2004) p. 1113.
4. B.A. Hull, M.K. Das, J.J. Sumakeris, J. Richmond, and S. Krishnaswami: Drift Free, 10 kV, 20 A, 4H-SiC PiN Diodes (Electronic Materials Conference, South Bend, IN, June 2004).