Influence of gate material and stress voltage on post breakdown leakage current of high K dielectrics

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 632-633

  Duschl, R ^a   Kerber, M ^a   Schroeder, U ^a   Hecht, T ^a   Jakschik, S ^a   Kapteyn, C ^a   Kudelka, S ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATE MATERIAL; METAL ELECTRODES; PRODUCT OPERATION; STRESS VOLTAGE;

DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRODES; STRESS ANALYSIS;

LEAKAGE CURRENTS;

EID: 24144449161     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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