First principles total energy studies of the adsorption of germane on Ge(001)-c(2 × 4)

Thin Solid Films

Volumn 490, Issue 2, 2005, Pages 196-200

  Cocoletzi, Gregorio H ^a   Hernandez P H ^a   Takeuchi, Noboru ^b  

^a BENEMÉRITA UNIVERSIDAD AUTÓNOMA DE PUEBLA   (Mexico)

^b CENTRO DE CIENCIAS DE LA MATERIA CONDENSADA   (Mexico)

Author keywords

First principles calculations; Ge; Germane; H; Semiconductor surface

Indexed keywords

ADSORPTION; CRYSTAL ATOMIC STRUCTURE; DECOMPOSITION; DISSOCIATION; SILICON COMPOUNDS;

FIRST PRINCIPLES CALCULATIONS; GERMANE; H; SEMICONDUCTOR SURFACE;

SEMICONDUCTING GERMANIUM;

EID: 24044440960     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.053     Document Type: Conference Paper

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