The realization of silicon-on-insulator utilizing trench-before-bond and polish stop technology

Journal of the Electrochemical Society

Volumn 145, Issue 5, 1998, Pages 1738-1743

  Baine, P T ^a   Gay, D L ^a   Armstrong, B M ^a   Gamble, H S ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; EPITAXIAL GROWTH; OXIDATION; POLISHING;

POLISH STOP TECHNOLOGY; TRENCH BEFORE BOND PROCESS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032072764     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838550     Document Type: Article

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