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Volumn 44, Issue 6 A, 2005, Pages 3798-3802

Metal-organic vapor-phase epitaxy of pseudomorphic InAlP/InGaAs high electron mobility transistor wafers

Author keywords

HEMT; InAlP; InGaAs; InP; MOVPE

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY;

EID: 23944452277     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.3798     Document Type: Article
Times cited : (5)

References (19)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.