|
Volumn 44, Issue 6 A, 2005, Pages 3798-3802
|
Metal-organic vapor-phase epitaxy of pseudomorphic InAlP/InGaAs high electron mobility transistor wafers
a
NTT CORPORATION
(Japan)
|
Author keywords
HEMT; InAlP; InGaAs; InP; MOVPE
|
Indexed keywords
CARRIER CONCENTRATION;
ELECTRON MOBILITY;
HETEROJUNCTIONS;
HIGH ELECTRON MOBILITY TRANSISTORS;
INDIUM COMPOUNDS;
METALLORGANIC VAPOR PHASE EPITAXY;
INAIP;
INGAAS;
WET-ETCHING;
SILICON WAFERS;
|
EID: 23944452277
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.44.3798 Document Type: Article |
Times cited : (5)
|
References (19)
|