Dynamical instability and switching of resonant tunneling device under terahertz radiation

Journal of Applied Physics

Volumn 98, Issue 3, 2005, Pages

  Zhang, Y H ^a   Cao, J C ^a   Feng, S L ^a   Liu, H C ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICAL INSTABILITY; ENERGY-LEVEL COUPLING; NONLINEAR PROCESSES; RESONANT TUNNELING DEVICE;

ELECTROMAGNETIC WAVES; ELECTRON ENERGY LEVELS; FREQUENCIES; MATHEMATICAL MODELS; POISSON DISTRIBUTION; TRANSPORT PROPERTIES;

RESONANT TUNNELING;

EID: 23944450608     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2006991     Document Type: Article

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