Improvement in parametric and reliability performance of 90nm dual-damascene interconnects using Ar+ punch-thru PVD Ta(N) barrier process

Advanced Metallization Conference (AMC)

Volumn , Issue , 2004, Pages 247-252

  Kumar, Niranjan ^a   Chu, Schubert ^a   Diehl, Daniel L ^b   Tanimoto, Takehito ^b   Ohkura, A ^b   Maekawa, K ^c   Mori, K ^c   Kobayashi, K ^c   Yoneda, M ^c  

^a APPLIED MATERIALS INC   (United States)

^b Applied Materials Japan   (Japan)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CURRENT DENSITY; DIFFUSION; ELECTROMIGRATION; NUCLEATION; OPTICAL INTERCONNECTS; PHYSICAL VAPOR DEPOSITION; SHRINKAGE; STRESSES;

BARRIER PROCESS; DUAL DAMASCENE INTERCONNECTS; VOID NUCLEATION;

RELIABILITY;

EID: 23844535453     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Motoyama, et al., Reliability improvement of Cu Low-K DD interconnects., IITC (2002)
2. G. Steinlesberger, et al., Proceedings of Advanced Metallization Conference, p. 397 (2002)
3. P. Gopalraja, et al., Proceedings of Advanced Metallization Conference, (2002)
4. K. Maekawa, et al., A new barrier metal structure with ALD TaN for highly reliable Cu DD Interconnects, Proceedings of Advanced Metallization Conference, 2004
5. st integration for improved reliability in Cu DD interconnects, IITC'03
6. K. Maekawa., et al., Improvement in Reliability of Cu DD interconnects using Cu-Al Alloy Seed, Proceedings of Asian session (ADMETA'04) of Advanced Metallization Conference