A new barrier metal structure with ALD-TaN for highly reliable Cu dual damascene interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2004, Pages 693-698

  Mori, Kenichi ^a   Maekawa, Kazuyoshi ^a   Kobayashi, Kiyoteru ^a   Yoneda, Masahiro ^a  

^a Production and Technology Unit   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMIGRATION; ETCHING; OPTIMIZATION; RELIABILITY; STRESSES; TANTALUM COMPOUNDS;

BARRIER METALS; ETCHING STEP; STRESS INDUCE VOIDING (SIV); STRESSMIGRATION;

COPPER;

EID: 23844508486     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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