CVD precursors for NiSi films

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 663-668

  Kada, T ^a   Ishikawa, M ^a   Machida, H ^a   Ogura, A ^b   Ohshita, Y ^c  

^a TRI Chemical Laboratory Inc   (Japan)

^b NEC CORPORATION   (Japan)

^c TOYOTA TECHNOLOGICAL INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRODES; MELTING; NICKEL COMPOUNDS; SILICA; SILICON; SUBLIMATION; SUBSTRATES;

DEPOSITION RATE; MELTING POINT; METAL-GATE ELECTRODES; PRECURSORS;

METALLIC FILMS;

EID: 23844496462     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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4. "Inorganic reactions and methods", eds. J. J. Zuchkerman and A. P. Hagen (VCH Publishers, New York, 1990) Vol. 12b, Chap. 5, p. 323.
5. E. Fujii et al., Jpn. J. Appl. Phys., 35 (1996) L328.
6. J-K. Kang and S-W. Rhee, J. Mater. Res., 15 (2000) p. 1828.
7. L. Brissonneau et al., Chem.Vap. Deposition, 5 (1999) p. 143.
8. L. Brissonneau and C. Vahlas, Cheat. Vap. Deposition, 5 (1999) p. 135.