Application of photoconductivity decay and photocurrent generation methods for determination of minority carrier lifetime in silicon

Bulletin of Materials Science

Volumn 28, Issue 4, 2005, Pages 317-323

  Singh, S N ^a   Gandotra, R ^a   Singh, P K ^a   Chakravarty, B C ^a  

^a NATIONAL PHYSICAL LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GRAIN BOUNDARIES; MATHEMATICAL TECHNIQUES; PHOTOCONDUCTIVITY; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; VACUUM; VELOCITY MEASUREMENT;

PHOTOCONDUCTIVITY DECAY (PCD); PHOTOCURRENT GENERATION (PCG); PURE MATERIALS; VACUUM CONDITIONS;

SILICON;

EID: 23844485923     PISSN: 02504707     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02704243     Document Type: Conference Paper

References (7)

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3. Jain G C, Singh S N and Kotnala R K 1983 Solar Cells 8 239
4. Sharma S K, Singh S N, Chakravarty B C and Das B K 1986 J. Appl. Phys. 60 3550
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6. Singh S N, Kishore R and Singh P K 1985a J. Appl. Phys. 57 2793
7. Singh S N, Kishore R and Arora N K 1985b Solar Cells 14 13