Bulk and interfacial leakage current in dielectric degradation of copper damascene interconnects

Advanced Metallization Conference (AMC)

Volumn , Issue , 2003, Pages 411-414

  Yoshie, T ^a   Yoneda, K ^a   Ohashi, N ^a   Kobayashi, N ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COPPER; DIELECTRIC FILMS; DIFFUSION; PLASMAS; SILICON CARBIDE; SILICON WAFERS;

COPPER DAMASCENE INTERCONNECTS; DIELECTRIC BARRIERS; NH3 PLASMA TREATMENT; TMS BARRIERS;

LEAKAGE CURRENTS;

EID: 23844484886     PISSN: 15401766     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

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2. J. W. McPherson and H. C. Mogul, J. Applied Physics, 84(3), pp.1513-1523, 1998
3. K. Takeda, D. Ryuzaki, T. Mine, and K. Hinode, IITC2001, pp.244-246, 2001.