메뉴 건너뛰기




Volumn EXS, Issue 2, 2004, Pages 141-143

Carbon nanotube-silicon heterojunction diode array - Integration on silicon and rectifying characteristics

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRONIC EQUIPMENT; HETEROJUNCTIONS; INTEGRATED CIRCUITS; LOGIC CIRCUITS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY;

EID: 23844484862     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (1)

References (9)
  • 6
    • 0032606420 scopus 로고    scopus 로고
    • Appl. Phys. Lett. 75, 367 (1999).
    • (1999) Appl. Phys. Lett. , vol.75 , pp. 367
  • 8
    • 33645201907 scopus 로고    scopus 로고
    • note
    • The parameters for the silicon were derived from the dopant concentration dependence of the band gap and the Fermi level. The optical gap of the CNTs was estimated from our optical investigations, e.g. 200 meV, and the work function was assumed to be almost equal to this of graphite with the Fermi level in the middle of the optical gap.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.