Simulations of the electrostatic potential in a thin silicon specimen containing a p-n junction

Materials Research Society Symposium Proceedings

Volumn 839, Issue , 2005, Pages 37-42

  Somodi, P K ^a   Dunin Borkowski, R E ^a   Twitchett, A C ^a   Barnes, C H W ^b   Midgley, P A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTROMAGNETIC WAVE INTERFERENCE; ELECTRON BEAMS; ELECTRON HOLOGRAPHY; ELECTROSTATICS; INTEGRAL EQUATIONS; INTERFACIAL ENERGY; LIGHT SCATTERING; SEMICONDUCTING SILICON; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

DOPANTS; ELECTROSTATIC POTENTIAL; FRINGE PATTERNS; SPATIAL RESOLUTION;

ELECTRIC POTENTIAL;

EID: 23844484213     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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