Effect of Ag doping on optical and electrical properties of ZnO thin films

Chinese Physics Letters

Volumn 22, Issue 8, 2005, Pages 2031-2034

  Xu, Jin ^a   Zhang, Zi Yu ^a   Zhang, Yang ^a   Lin, Bi Xia ^a   Fu, Zhu Xi ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; II-VI SEMICONDUCTORS; OPTICAL FILMS; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; SILVER; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; ZINC OXIDE;

AG DOPED; AG DOPING; CURRENT-VOLTAGE; NEAR BAND EDGE EMISSIONS; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE SI; RED SHIFT; SI (100) SUBSTRATE; ZNO THIN FILM; ZNO/P-SI;

METALLIC FILMS;

EID: 23844453197     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/8/058     Document Type: Article

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