Electrical and optical properties of In-doped CdTe after Cd-rich annealing

IEEE Nuclear Science Symposium Conference Record

Volumn 7, Issue , 2004, Pages 4466-4469

  Belas, E ^a   Grill, R ^a   Toth, A L ^b   Franc, J ^a   Moravec, P ^a   Horodysky, P ^a   Hoschl P ^a   Wiehert, T ^c   Wolf, H ^c  

^a CHARLES UNIVERSITY   (Czech Republic)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^c SAARLAND UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); ELECTRON MOBILITY; GAMMA RAYS; INDIUM; IONIZATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RADIATION DETECTORS;

GAMMA-RAY DETECTORS; HE-NE LASERS; SILVER ACCEPTORS; VERTICAL GRADIENT FREEZE METHODS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 23844450326     PISSN: 10957863     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

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