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Volumn 161, Issue 1-4, 1996, Pages 40-44
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Comparison of Bridgman and THM method regarding the effect of In doping and distribution of Zn in CdTe
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHARGE CARRIERS;
COOLING;
ELECTRIC PROPERTIES;
LATTICE CONSTANTS;
MATHEMATICAL MODELS;
SEMICONDUCTING CADMIUM COMPOUNDS;
SEMICONDUCTING INDIUM;
SEMICONDUCTOR DOPING;
ZINC;
BRIDGMAN TECHNIQUES;
CADMIUM TELLURIDE;
TRAVELLING HEATER METHODS;
VEGARD RULE;
CRYSTAL GROWTH;
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EID: 0030125524
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/0022-0248(95)00609-5 Document Type: Article |
Times cited : (16)
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References (14)
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