A D-band frequency doubler MMIC based on a 100-nm metamorphic HEMT technology

IEEE Microwave and Wireless Components Letters

Volumn 15, Issue 7, 2005, Pages 466-468

  Campos Roca, Yolanda ^a   Schwörer, Christoph ^b   Leuther, Arnulf ^b   Seelmann Eggebert, Matthias ^b   Massler, Hermann ^b  

^a UNIVERSITY OF EXTREMADURA   (Spain)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Coplanar waveguide (CPW); Frequency multiplier; Metaniorphic high electron mobility transistor (MHEMT); MMIC

Indexed keywords

BANDWIDTH; BUFFER AMPLIFIERS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; FREQUENCY MULTIPLYING CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RESISTORS; WAVEGUIDES;

ADVANCED DESIGN SYSTEM (ADS); GATE VOLTAGE; LOW-PASS TOPOLOGY; MULTIHARMONIC LOADPULL SIMULATIONS;

FREQUENCY DOUBLERS;

EID: 23844447044     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2005.851566     Document Type: Article

References (6)

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