Imaging nanoscale electronic inhomogeneity in the lightly doped mott insulator Ca2-xNaxCuO2Cl2

Physical Review Letters

Volumn 93, Issue 9, 2004, Pages

  Kohsaka, Y ^a   Iwaya, K ^b   Satow, S ^a   Hanaguri, T ^b,c   Azuma, M ^c,d   Takano, M ^d   Takagi, H ^a,b,c  

^a UNIVERSITY OF TOKYO   (Japan)

^b RIKEN   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^d KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC CONDUCTANCE; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; IMAGING TECHNIQUES; MAGNETORESISTANCE; MANGANESE; NUMERICAL ANALYSIS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; STOICHIOMETRY; THERMAL EFFECTS;

COLOSSAL MAGNETORESISTANCE (CMR); ELECTRONIC INHOMOGENEITY; ELECTRONIC STATE; MOTT INSULATORS;

ANTIFERROMAGNETIC MATERIALS;

EID: 19544375043     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.93.097004     Document Type: Article

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