Dielectric property of oxynitride perovskites containing Ta 5+

Ceramic Transactions

Volumn 169, Issue , 2005, Pages 179-186

  Kim, Young Il ^a   Woodward, Patrick M ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; FREQUENCY DEPENDANCE; SINTERING PROCESS; TEMPEERATURE RANGE;

CERAMIC MATERIALS; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; NITROGEN COMPOUNDS; PERMITTIVITY; PHASE TRANSITIONS; SPECTROSCOPY; TANTALUM;

PEROVSKITE;

EID: 23744487289     PISSN: 10421122     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (9)

1. P.K. Davies, R.S. Roth, Chemistry of Electronic Ceramic Materials, National Institute of Standards and Technology Special Publication 804 NIST Gaithergburg, MD 1991.
2. R.Roy, R. Guo, A.S. Bhalla, "Perovskite: lessons from its history and its crystal chemistry", Ceramic Transactions, Vol. 104, Amer. Ceram. Soc. Westerville, OH (1999)
3. L.E. Cross, "Relaxor ferroelectrics" Ferroelectrics, 76 241 (1987).
4. 2N (A = Ba, Sr, Ca; M = Ta, Mb)" Chemistry of Materials, 16 1267 (2004).
5. R.D. Shannon "Dielectric polarizabilities of ions in oxides and fluorides" Journal of Applied Physics, 73 348 (1993).
6. R. Marchand, F. Pors, Y. Laurent, O. Regreny, J. Lostec, J.M. Haussonne,"Oxynitride perovskites used as dielectric materials" Journal de Physique, C1 901 (1986).
7. A.C. Larson, R.B. von Dreele General Structure Analysis System, Los Alamos National Laboratory Report LAUR 86-748 (1994).
8. 3" Acta Crystallographica, B56 594 (2000).
9. Y.-I. Kim, P.M. Woodward, T.Vogt, unpublished result.