Monolithic integration of InGaAs/InAlGaAs-based semiconductor optical amplifiers and 10 Gb/s broadband electro-absorption modulators using quantum well intermixing technology

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 403-406

  McDougall, S D ^a   Qiu, B C ^a   Ternent, G ^a   Yanson, D A ^a   Loyo Maldonado, V ^a   Kowalski, O P ^a   Marsh, J H ^a  

^a Intense Ltd   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRON ABSORPTION; INSERTION LOSSES; LIGHT AMPLIFIERS; LIGHT MODULATORS; MICROPROCESSOR CHIPS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

BROADBAND ELECTRO-ABSORPTION MODULATOR (BEAM); FIBER COUPLING; INTERMIXING TECHNOLOGY; SEMICONDUCTOR OPTICAL AMPLIFIERS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 23744450947     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. J.H. Marsh, O.P. Kowalski, S.D. McDougall, B.C. Qiu, A. McKee, C.J. Hamilton, R.M. De La Rue, and A.C. Bryce, "Quantum well intermixing in material systems for 1.5 μm," J. Vac. Sci. Technol. A, 16, pp 810-814. 1998.
2. 2 protection layers," IEEE Phot. Techn. Lett., 12, pp. 1141-3, 2000.
3. T. Saitoh and T. Mukai, "Recent Progress in Semiconductor Laser Amplifiers", J. Lightwave Tech., 6, pp. 1656-1664, 1988.
4. G.L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, "Ultrahigh-Speed Traveling-Wave Electroabsorption Modulator - Design and Analysis", IEEE Trans. on Microw. Th. and Techn., 47, p. 1177, 1999.