STMmeasurements of barrier height on Si(111)-7×7 and GaAs(110) cleaved surfaces using I(z), z(V) and I(z(V) V) techniques

Applied Physics A: Materials Science and Processing

Volumn 66, Issue SUPPL. 1, 1998, Pages

  Grandidier, B ^a   Nys, J P ^a   Stievenard, D ^a   De La Broise X ^a   Delerue, C ^a   Lannoo, M ^a  

^a Institut Superieur de l'Electronique et du Numerique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BASE PRESSURE; CLEAVED SURFACES; ELECTRIC DIPOLE; GAAS; GAAS SURFACES; KELDYSH GREEN FUNCTION; LOCAL DENSITY OF STATE; POLYCRYSTALLINE; REPRODUCIBILITIES; SI (1 1 1); SPUTTERING PROCESS; THEORETICAL MODELS; TUNGSTEN TIP;

ADSORPTION; FIELD EMISSION; GALLIUM ALLOYS; GALLIUM ARSENIDE; TUNGSTEN; ULTRAHIGH VACUUM;

SEMICONDUCTING GALLIUM;

EID: 23544457481     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s003390051278     Document Type: Article

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