Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 237, Issue 1-2, 2005, Pages 336-340

  Graoui, H ^a   Conti, G ^a   Hilkene, M ^a   McComb, B ^a   Tjandra, A ^a   Foad, M A ^a   Kouzminov, D ^b   Hunter, J ^b   Hitzman, C J ^c   Evans, C A ^c  

^a APPLIED MATERIALS INC   (United States)

^b Materials Analytical Services   (United States)

^c Full Wafer Analysis   (United States)

Author keywords

Angle resolved X ray photoelectron spectroscopy; Arsenic; Ion implantation; Low energy electron induced X ray emission spectrometry; Metrology; Secondary ion mass spectrometry

Indexed keywords

ANNEALING; ARSENIC; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; OXIDATION; SENSITIVITY ANALYSIS; X RAY ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

DOSE SENSITIVITY; ENERGY VARIATIONS; LOW ENERGY ELECTRON INDUCED X-RAY EMISSION SPECTROMETRY (LEXES); NATIVE OXIDE THICKNESS;

SECONDARY ION MASS SPECTROMETRY;

EID: 23444449319     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.05.010     Document Type: Conference Paper

References (3)

1. D. Kouzminov, Y. Li, J. Hunter, H. Graoui, A. Al-Bayati, M. Foad, P. Staub, C. Hombourger, M. Schuhmacher, IEEE, 2002, p. 338.
2. IntriX: a Numerical Model for Electron Probe Analysis at High Depth Resolution, Part I-Theoretical Description, X-Ray Spectrometry 27 (1998) 43.
3. 2 interfaces by SIMS, International Conference on Microelectronics and interfaces AVS ICMI'05.