Optical and structural properties of thin films of ZnS grown by atomic layer epitaxy

Journal of Wide Bandgap Materials

Volumn 9, Issue 1-2, 2001, Pages 55-63

  Godlewski, M ^a   Guziewicz, E ^a   Szczerbakow, A ^a   Kopalko, K ^a   Dynowska, E ^a   Phillips, M R ^b   Cricenti, A ^c   Girasole, M ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF TECHNOLOGY SYDNEY   (Australia)

^c CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTROLUMINESCENCE; OPTICAL RESOLVING POWER; OPTOELECTRONIC DEVICES; THIN FILMS; VAPOR PHASE EPITAXY;

ATOMIC LAYER EPITAXY (ALE); ELECTROLUMINESCENCE (EL) DISPLAYS; GAS FLOW SYSTEMS; MONOCRYSTALLINE FILMS;

ZINC SULFIDE;

EID: 2342663951     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/152451102025830     Document Type: Article

References (9)

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