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2342511836
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note
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A tip apex of etched Si probes used in tapping mode is typically in the 10-20 nm range. The resolution in tapping mode images is higher than the apex size that is most likely related to the fact that tip-sample contact area depends not only on the tip size but also on imaging force and mechanical properties of the sample and the tip.
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15
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2342470359
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2342585113
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note
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2O. Similar conditions are used for a growth of diamond-like coatings. The probes were visualized with JEOL EM 100CX transmission electron microscope (JEOL, Japan) under accelerating voltage of 80 kV.
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19
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84862348259
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www.spmtips.com/hires/rotaxane/;www.spmtips.com/hires/rms/
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www.spmtips.com/hires/;www.spmtips.com/hires/rotaxane/;www.spmtips.com/ hires/rms/
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2342559566
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note
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Tapping mode measurements were performed with a Dimension 5000 (Veeco Instruments) scanning probe microscope. We applied Si probes (NanoDevices/Veeco Instruments) with the cantilevers of 225 μm in length and 1 N/m in stiffness. Carbon probes were grown at the apex of the etched Si probes (MikroMasch Eesti, Tallinn, Estonia) with the cantilevers of 125 μm in length and 5 N/m in stiffness. In our measurements with probes of both kinds, free-oscillating amplitudes were chosen around 0.3 V. Thiscorresponds to the oscillation amplitudes of ∼8 nm for the regular probe and ∼4 nm for the new probe. Imaging was performed in light tapping, i.e., with a set-point amplitude close to the free-oscillating amplitude. Scanning rate was in the 1.5-3.5 Hz range. A sewing engagement procedure was applied to avoid the tip damage during the probe engagement into a sample.
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0026191191
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S. N. Magonov, G. Bar, H.-J. Cantow, H.-D. Bauer, I. Müller, and M. Schwoerer, Polym. Bull. (Berlin) 26, 223 (1991).
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Magonov, S.N.1
Bar, G.2
Cantow, H.-J.3
Bauer, H.-D.4
Müller, I.5
Schwoerer, M.6
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