Pulsed laser deposition of II-VI semiconductor thin films and their layered structures

Journal of Alloys and Compounds

Volumn 371, Issue 1-2, 2004, Pages 164-167

  Oszwaldowski, M ^a   Berus, T ^a   Rzeszutek, J ^a   Sidorchuk, P ^a,d   Polit, J ^b   Sheregii, E ^b   Szade, J ^c  

^a POZNAN UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF RZESZÓW   (Poland)

^c UNIVERSITY OF SILESIA   (Poland)

^d DROHOBYCH IVAN FRANKO STATE PEDAGOGICAL UNIVERSITY   (Ukraine)

Author keywords

Semiconductors; Thin films; Vapour deposition

Indexed keywords

COMPOSITION; EVAPORATION; LATTICE CONSTANTS; OPTICAL SWITCHES; PULSED LASER DEPOSITION; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES; STOICHIOMETRY; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH POWER DENSITY; MULTI-TARGET OPERATION; VACUUM CHAMBER; VAPOUR DEPOSITION;

SEMICONDUCTING FILMS;

EID: 2342614753     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2003.05.010     Document Type: Conference Paper

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