Depth profiles of H, C, O, Al and Si implants in a GaN substrate using trace element accelerator mass spectrometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 455-458

  Mitchell, Lee J ^a   Ravi Prasad, G V ^b   Pelicon, Primoz ^c   Smith, Eric B ^a   McDaniel, Floyd D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b INSTITUTE OF PHYSICS   (India)

^c JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Gallium nitride (GaN); Impurities; Secondary ion mass spectrometry (SIMS); Trace element accelerator mass spectrometry

Indexed keywords

CONCENTRATION (PROCESS); CONTAMINATION; DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; IMPURITIES; NATURAL FREQUENCIES; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; TRACE ELEMENTS; WAVE INTERFERENCE;

ACCELERATED MASS SPECTROMETRY (AMS); ATOMIC NUMBER; ELECTRON AFFINITY; TRACE ELEMENT ACCELERATOR MASS SPECTROMETRY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 2342590680     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.101     Document Type: Conference Paper

References (7)

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