High sensitivity measurement of implanted As in the presence of Ge in GexSi1-x/Si layered alloys using trace element accelerator mass spectrometry

Applied Physics Letters

Volumn 77, Issue 24, 2000, Pages 3974-3976

  Datar, S A ^a   Wu, Liying ^b   Guo, B N ^a   Nigam, M ^a   Necsoiu, D ^a   Zhai, Y J ^a   Smith, D E ^a   Yang, C ^a   Bouanani, M E ^a   Lee, J J ^b   McDaniel, F D ^a  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000179001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1331093     Document Type: Article

References (11)

1. T. L. Lin and J. Maserjian, Appl. Phys. Lett. 57, 1422 (1990).
2. K. L. Wang and R. P. G. Karunasiri, J. Vac. Sci. Technol. B 11, 1159 (1993).
3. R. G. Wilson, F. A. Stevie, and C. W. Magee, Secondary Ion Mass Spectrometry (Wiley, New York, 1989).
4. D. Elmore and F. M. Phillips, Science 236, 543 (1987).
5. J. M. Anthony, D. J. Donahue, and T. H. Zahel, Nucl. Instrum. Methods Phys. Res. B 10/11, 498 (1985).
6. F. D. McDaniel, S. A. Datar, B. N. Guo, S. N. Renfrow, Z. Y. Zhao, and J. M. Anthony, Appl. Phys. Lett. 72, 3008 (1998).
7. J. R. Davis, A. Rohatgi, R. H. Hopkins, P. D. Blais, P. Rai-Choudhury, J. R. McCormick, and H. C. Mollenkopf, IEEE Trans. Electron Devices ED-27, 677 (1980).
8. D. L. Weathers, F. D. McDaniel, S. Matteson, J. L. Duggan, J. M. Anthony, and M. A. Douglas, Nucl. Instrum. Methods Phys. Res. B 56/57, 889 (1991).
9. J. F. Kirchhoff, D. K. Marble, D. L. Weathers, F. D. McDaniel, S. Matteson, J. M. Anthony, R. L. Beavers, and T. J. Bennett, Rev. Sci. Instrum. 65, 1570 (1994).
10. S. A. Datar, Ph.D. thesis, University of Rochester, Rochester, NY, 1994.
11. S. A. Datar, S. N. Renfrow, B. N. Guo, and F. D. McDaniel, AIP Conference Proceedings, edited by J. L. Duggan and I. L. Morgan (American Institute of Physics, Woodbury, NY, 1999), pp. 632-635.