Influence of heat source distributions in GaAs/GaAlAs quantum-well high-power laser arrays on temperature profile and thermal resistance

Journal of Thermal Analysis

Volumn 48, Issue 6, 1997, Pages 1273-1282

  Puchert, R ^a   Menzel, U ^a   Barwolff A ^a   Voss M ^a   Lier, Ch ^a  

^a MAX BORN INSTITUT   (Germany)

Author keywords

Finite element method; Semiconductor laser; Temperature distribution

Indexed keywords

COMPUTATIONAL METHODS; FINITE ELEMENT METHOD; HEAT RESISTANCE; HIGH POWER LASERS; LIGHT EMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE DISTRIBUTION; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

GALLIUM ALUMINUM ARSENIDE LASER ARRAYS;

QUANTUM WELL LASERS;

EID: 0031153697     PISSN: 03684466     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF01983437     Document Type: Article

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