Structural and electrical properties of sol-gel deposited Pb(Zr 0.92Ti0.08)O3 thin films doped with Nb

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 174-177

  Pintilie, L ^a,b   Boerasu, I ^a   Pereira, M ^a   Gomes, M J M ^a  

^a UNIVERSITY OF MINHO   (Portugal)

^b NATIONAL INSTITUTE OF MATERIALS PHYSICS   (Romania)

Author keywords

Ferroelectrics; PZT; Sol gel (film deposition; thin films); Thin films

Indexed keywords

CERAMIC MATERIALS; COERCIVE FORCE; DIELECTRIC LOSSES; ELECTROMAGNETISM; FERROELECTRIC MATERIALS; HYSTERESIS; LEAD COMPOUNDS; PYROELECTRICITY; SCANNING ELECTRON MICROSCOPY; SOL-GELS; TITANIUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIUM;

MORPHOTROPIC PHASE; PB(ZR0.92TI0.08)O3; PZT; SOL-GEL (FILM DEPOSITION);

THIN FILMS;

EID: 2342501848     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.043     Document Type: Conference Paper

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