Phonon bottleneck effects in InAs/GaInP quantum dots

Journal of Luminescence

Volumn 108, Issue 1-4, 2004, Pages 273-276

  Ikeda, K ^a   Sekiguchi, H ^a   Minami, F ^a   Yoshino, J ^a   Mitsumori, Y ^b   Amanai, H ^c   Nagao, S ^c   Sakaki, S ^d  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^c MITSUBISHI CHEMICAL CORPORATION   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

Author keywords

Confined systems; Electron phonon interaction; Exciton levels; InAs; Phonon bottleneck

Indexed keywords

HETEROJUNCTIONS; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; PHOTOLUMINESCENCE; PROBABILITY; RELAXATION PROCESSES; RESONANCE; SCATTERING; SECOND HARMONIC GENERATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

CONFINED SYSTEMS; ELECTRON-PHONON INTERACTIONS; EXCITON LEVELS; INAS; PHONON BOTTLENECK EFFECTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 2342476556     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2004.01.058     Document Type: Conference Paper

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