Influence of oxygen ion implantation on the damage and annealing kinetics of iron-implanted sapphire

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 166, Issue , 2000, Pages 188-192

  McHargue, Carl J ^a   Hunn, John D ^a   Alves, E ^b   Da Silva, M F ^b   Soares, J C ^b  

^a UNIVERSITY OF TENNESSEE   (United States)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ION BOMBARDMENT; ION IMPLANTATION; IRON; OXIDATION; OXYGEN; RADIATION DAMAGE; REDUCTION; SAPPHIRE;

COIMPLANTATION;

ELECTRIC INSULATING MATERIALS;

EID: 0033738697     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00657-6     Document Type: Article

References (9)

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