Quantum oscillation of TMR in tunneling junctions containing a non-magnetic spacer

Journal of Magnetism and Magnetic Materials

Volumn 272-276, Issue SUPPL. 1, 2004, Pages

  Itoh, H ^a   Inoue, J ^a,b   Umerski, A ^a,b,c,d   Mathon, J ^a,b,c,d  

^a NAGOYA UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c OPEN UNIVERSITY   (United Kingdom)

^d CITY UNIVERSITY   (United Kingdom)

Author keywords

Disorder; Quantum well; Tunnel magnetoresistance

Indexed keywords

ELECTRON TUNNELING; ELECTRONIC STRUCTURE; FERMI LEVEL; MAGNETORESISTANCE; MATHEMATICAL MODELS; OSCILLATIONS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM WELLS; VECTORS;

DISORDER; INTERFACIAL ELECTRONIC STRUCTURE; TIGHT-BINDING MODEL; TUNNEL MAGNETORESISTANCE;

QUANTUM THEORY;

EID: 23144464505     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2003.12.1043     Document Type: Conference Paper

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