The nitrogen doping effect on the properties of Ge-In-Sb-Te phase-change recording media investigated by blue-light laser

Thin Solid Films

Volumn 488, Issue 1-2, 2005, Pages 211-216

  Yeh, Tung Ti ^a   Hsieh, T E ^a   Shieh, Han Ping D ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Ge In Sb Te phase change recording media; Microstructure; Nitrogen doping; Recrystallization speed

Indexed keywords

CRYSTALLINE MATERIALS; DIFFERENTIAL SCANNING CALORIMETRY; ELLIPSOMETRY; GERMANIUM; IRRADIATION; MICROSTRUCTURE; RECRYSTALLIZATION (METALLURGY); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BLUE-LIGHT LASER; GE-IN-SB-TE PHASE-CHANGE RECORDING MEDIA; NITROGEN DOPING; RECRYSTALLIZATION SPEED;

NITROGEN;

EID: 23044497061     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.062     Document Type: Article

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