FLAPW electronic band structure of the filled skutterudite ThFe 4P12

Physica B: Condensed Matter

Volumn 329-333, Issue II, 2003, Pages 464-466

  Takegahara, Katsuhiko ^a   Harima, Hisatomo ^b  

^a HIROSAKI UNIVERSITY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

Author keywords

Electronic band structure; Filled stutterudite; FLAPW method; ThFe4P12

Indexed keywords

APPROXIMATION THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; LANTHANUM COMPOUNDS; LOW TEMPERATURE EFFECTS; MAGNETIZATION; SEMICONDUCTOR MATERIALS;

ELECTRONIC BAND STRUCTURE; FILLED SKUTTERUDITES; FLAPW METHOD; MAGNETIC FIELD DEPENDENCE; THFE4P12;

THORIUM COMPOUNDS;

EID: 23044481554     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(02)02033-1     Document Type: Conference Paper

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