Effect of deposition and annealing parameters on the properties of electrodeposited CuIn1-xGaxSe2 thin films

Thin Solid Films

Volumn 488, Issue 1-2, 2005, Pages 62-67

  Bouabid, K ^a   Ihlal, A ^a   Manar, A ^a   Outzourhit, A ^b   Ameziane, E L ^b  

^a IBN ZOHR UNIVERSITY   (Morocco)

^b FACULTÉ DES SCIENCES SEMLALIA   (Morocco)

Author keywords

Chalcopyrite; CuIn1 xGaxSe2; Electrodeposition; Optical properties

Indexed keywords

ACTIVATION ENERGY; COMPOSITION; COPPER COMPOUNDS; CRYSTAL STRUCTURE; ELECTRODEPOSITION; EVAPORATION; GRAIN BOUNDARIES; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; RAPID THERMAL ANNEALING; SOLUTIONS; X RAY DIFFRACTION;

CHALCOPYRITE; CUIN1-XGAX-SE2; POLYCRYSTALLINE FILMS; STACKED PRECURSORS;

THIN FILMS;

EID: 23044467651     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.04.111     Document Type: Article

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