Hydrogen in amorphous silicon

Current Opinion in Solid State and Materials Science

Volumn 1, Issue 4, 1996, Pages 562-566

  Jackson, Warren B ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038433189     PISSN: 13590286     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1359-0286(96)80073-8     Document Type: Article

References (35)

1. Jackson WB, Tsai CC: Hydrogen transport in amorphous silicon. Phys Rev B 1992, 45:6564-6580.
2. Van de Walle CG: Energies of various configurations of hydrogen in silicon. Phys Rev B 1994, 49:4579-4585. Review of the latest and most careful calculations of energy levels refining the energies presented earlier in ?
3. Northrup JE: Structure of Si(100)H: dependence on the H chemical potential. Phys Rev B 1991, 44:1419-1422.
4. Zhang SB, Jackson WB: Formation of extended hydrogen complexes in silicon. Phys Rev B 1991, 43:12142-12145.
5. Herring C, Johnson NM: Hydrogen migration and solubility in silicon. In Hydrogen in Semiconductors. Edited by Pankove Jl, Johnson NM. Boston: Academic Press; 1991:225-350 and references therein.
6. Buda F, Chiarotti GL, Car R, Parrinello M: Proton diffusion in crystalline silicon. Phys Rev Lett 1989, 63:294-297.
7. Fedders PA: Defects, energies, hydrogen, and structural properties of molecular-dynamics modeled a-Si:H. In Amorphous Silicon Technology-1995, Materials Research Society Symposium Proceedings vol 377. Edited by Hack M, Schiff EA, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Society; 1995:269-274. The article is one of the few that calculate various H configurations and migration paths that occur specifically in amorphous silicon.
8. Li Q, Biwas R: Hydrogen rebonding and defect formation in a-Si:H. Phys Rev B 1995, 52:10705-10708. The calculations in this work test the defect pool assumptions that the defect formation energy is related to the gap state energy and finds that this assumption is invalid. Nevertheless, the defect pool theory works if one assumes that there is a correlation between bond disorder and band tails.
9. Van de Walle CG, Street RA: Structure, energetics and dissociation of Si-H bonds at dangling bonds in silicon. Phys Rev B 1994, 49:14766-14769.
10. Van de Walle CG, Denteneer PJH, Bar-Yam Y, Pantelides ST: Theory of hydrogen diffusion and reactions in crystalline silicon. Phys Rev B 1989, 39:10791-10808.
11. 2, and dopants in hydrogenated amorphous silicon and related materials. Physica B 1991, 170:305-319.
12. Beyer W, Herion J, Wagner H: Fermi energy dependence of surface desorption and diffusion of hydrogen in a-Si:H. J Non-Cryst Solids 1989, 114:217-219.
13. Johnson NM, Doland C, Ponce F, Walked J, Anderson G: Hydrogen in crystalline semiconductors: A review of experimental results. Physica B 1991, 170:3-20.
14. Tsai CC, Anderson GB, Thompson R: Low temperature growth of epitaxial and amorphous silicon in a hydrogen-diluted silane plasma. J Non-Cryst Solids 1991, 137-138:673-676.
15. Taylor PC: Nuclear magnetic resonance in amorphous silicon. In Semiconductors and Semimetals: Amorphous Silicon vol 21C. Edited by Pankove Pl. New York: Academic Press; 1984:99-134.
16. Zafar S, Schiff EA: Hydrogen-mediated model for defect metastability in hydrogenated amorphous silicon. Phys Rev B 1989, 40:5235-5238.
17. Boyce JB, Ready SE: Local structure of dopants in hydrogenated amorphous silicon. In Advances in Disordered Semiconductors-Vol. 1: Amorphous Silicon and Related Materials. Edited by Fritzche H. Singapore: World Scientific; 1989:29-62.
18. Chang KJ, Chadi DJ: Hydrogen bonding and diffusion in crystalline silicon. Phys Rev B 1989, 39:10791-10808.
19. Jackson WB, Santos PV, Tsai CC: Role of clustering in hydrogen transport in silicon. Phys Rev B 1993, 47:9993-9996.
20. Nickel N, Jackson WB: Hydrogen-mediated creation and annihilation of strain in amorphous silicon. Phys Rev B 1995, 51:4872-4881. Establishes that post-hydrogenation breaks strong Si-Si bonds rather than weak Si-Si bonds confirming the hydrogen chemical potential energy in Figure 1.
21. Roorda S, Doorn S, Sinke WC, Scholte PMLO, Van Loenen E: Calorimetric evidence for structural relation in amorphous silicon. Phys Rev Lett 1989, 62:1880-1883.
22. Abeles B, Yang L, Leta D, Majkrzak C: Fast diffusion of interstitial deuterium in amorphous silicon. J Non-Cryst Solids 1987, 97-98:353-356.
23. Santos PV, Johnson NM, Street RA, Hack M, Thompson R, Tsai CC: Hydrogen migration and electronic carriers in a-Si:H. Phys Rev B 1993, 47:10244-10260.
24. Branz HM, Asher SE, Nelson BP: Light enhanced deep deuterium emission and the diffusion mechanism in amorphous silicon. Phys Rev B 1993, 47:7061-7066.
25. Jackson WB: Effect of hydrogen exchange on diffusion and evolution in hydrogenated amorphous silicon. J Non-Cryst Solids 1993, 164-166:263-268.
26. Kemp M, Branz HM: Analytic solution of trap-controlled tracer diffusion in amorphous silicon. Phys Rev B 1993, 47:7067-7070.
27. Branz HM, Asher S, Xu Y, Kemp M: Evidence for exchange between free and deep hydrogen (deuterium) during diffusion. In Amorphous Silicon Technology-1995, Materials Research Society Symposium Proceedings vol 377. Edited by Hack M, Schiff EA, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Society; 1995:331-336. A demonstration that the exchange interaction is fully in agreement with observed profiles, thereby eliminating previous objections against a wide spread of H binding energies.
28. Beyer W, Zastrow U: Hydrogen and lithium diffusion in amorphous silicon. In Amorphous Silicon Technology-1993, Materials Research Soceity Symposium Proceedings vol 297. Edited by Schiff EA, Thompson MJ, Madan A, Tanaka K, LeComber PG. Pittsburgh: Materials Research Society; 1993:285-290.
29. Beyer W, Wagner H: Hydrogen diffusion and solubility in a-Si:H. In Amorphous Silicon Technology-1994, Materials Research Society Symposium Proceedings vol 336. Edited by Schiff EA, Hack M, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Society; 1994:323-328. Shows that solubility for layer diffusion tracks the existing H concentration and determines the position of the hydrogen chemical potential as a function of deposition temperature. This work demonstrates that there are very few traps once the H is removed yet lots of states when H is present, a result consistent with H cluster formation.
30. Street RA: Hydrogen diffusion and electronic metastability in amorphous silicon. Physics B 1991, 170:69-81.
31. Davis EA: Hydrogen in silicon. J Non-Cryst Solids 1996, in press. Measurements of the local environment for H analogue (muonium) at short times.
32. Hari P, Taylor PC, Street RA: Local and long-range hydrogen motion in a-Si:H. In Amorphous Silicon Technology-1995, Materials Research Society Symposium Proceedings vol 377. Edited by Hack M, Schiff EA, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Society; 1995:185-190. The first comprehensive measurements of the local motion of H as a function of temperature and doping. These measurements show that defect metastability is fully consistent with both local motion and macroscopic H motion, providing further evidence that H motion is a rate limiting step in defect generation and annealing.
33. Lust LM, Kakalios J: Telegraph noise as a probe of microscopic hydrogen motion in amorphous silicon. In Amorphous Silicon Technology-1995, Materials Research Society Symposium Proceedings vol 377. Edited by Hack M, Schiff EA, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Society; 1995:401-406. A demonstration that noise measurements are capable of determining H local motion. The noise measurements may be easier and more versatile method for measuring local H motion than nuclear magnetic resonance techniques.
34. Hari P, Taylor PC, Street RA: Effect of light soaking on the local motion of hydrogen in hydrogenated amorphous silicon. In Amorphous Silicon Technology-1994, Materials Research Society Symposium Proceedings vol 336. Edited by Schiff EA, Hack M, Madan A, Powell M, Matsuda A. Pittsburgh: Materials Research Soc; 1994:329-334.
35. Jackson WB: Connection between the Meyer-Neldel relation and multiple-trapping transport. Phys Rev B 1988, 38:3595-3598.