Electrical characteristics of As-doped p-type HgCdTe epilayers grown on CdZnTe(211)B substrates by molecular beam epitaxy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1205-1208

  Yang, B ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644449853     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590723     Document Type: Article

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