Transverse-field and defect-azimuth effects in achiral carbon nanotubes

Journal of Physics Condensed Matter

Volumn 17, Issue 29, 2005, Pages 4629-4636

  Zhu, Jia Lin ^a   Song, Hai Feng ^a   Hu, Xiao ^b  

^a TSINGHUA UNIVERSITY   (China)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEFECTS; DIODES; ELECTRIC CONDUCTANCE; ELECTRIC FIELDS; MAGNETIC FIELDS; SEMICONDUCTOR MATERIALS;

ELECTRONIC BEHAVIOR; SEMICONDUCTOR-METAL (SM); TRANSITION FIELDS; TRANSVERSE FIELDS;

CARBON NANOTUBES;

EID: 22544459386     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/29/005     Document Type: Article

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