Characterization of various low-k dielectrics for possible use in applications at temperatures below 160 °c

Journal of Physics: Conference Series

Volumn 10, Issue 1, 2005, Pages 218-221

  Vasilopoulou, M ^a   Tsevas, S ^a   Douvas, A M ^a   Argitis, P ^a   Davazoglou, D ^a   Kouvatsos, D ^a  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22544441918     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/10/1/054     Document Type: Article

References (9)

1. Shamirayan D, Abell T, Iacopi F and Maex K 2004 Materials Today (January) 34
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4. Bachelder T March 1988 Solid State Technol. 29
5. See, for instance Armbrust D S 1998 DUMIC Proc. p 90
6. For a review on 2nd generation low-k dielectrics see Wolf S and Tauber R 2000 Silicon Processing vol 1 (Lattice Press) p 793
7. Semiconductor Industry Association 2002 The National Technology Roadmap for Semiconductors
8. Petkov M P, Weber M H, Lynn K G, Rodbell K P and Cohen S A 1999 J. Appl. Phys. 86 3104
9. Baney R H, Itoh M, Sakakibara A and Suzuki T 1995 Chem. Rev. 95 1409