Atomic-Resolution X-Ray Fluorescence Holography of Zn (0.02 wt%) in a GaAs Wafer

Analytical Sciences

Volumn 14, Issue 5, 1998, Pages 987-990

  Hayashi, Kouichi ^a   Yamamoto, Tokujirou ^a   Kawai, Jun ^a   Suzuki, Motohiro ^b   Goto, Shunji ^c   Hayakawa, Shiniiro ^d   Sakurai, Kenji ^e   Gohshi, Yohichi ^f  

^a KYOTO UNIVERSITY   (Japan)

^b RIKEN HARIMA INSTITUTE   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^d UNIVERSITY OF TOKYO   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^f NATIONAL INSTITUTE FOR ENVIRONMENTAL STUDIES   (Japan)

Author keywords

dopant; GaAs wafer; local structure; multiple energy X ray holography; synchrotron radiation; X Ray fluorescence

Indexed keywords

EID: 22444455884     PISSN: 09106340     EISSN: 13482246     Source Type: Journal    
DOI: 10.2116/analsci.14.987     Document Type: Article

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