Effect of localized and delocalized electrons on the low-temperature conductivity and magnetoconductivity of metallic Ge homogeneously doped by As

Physica B: Condensed Matter

Volumn 284-288, Issue PART II, 2000, Pages 1185-1186

  Rentzsch, R ^a   Ionov, A N ^b   Fozooni, P ^c   Lea, M J ^c  

^a FREIE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF LONDON   (United Kingdom)

Author keywords

Doped semiconductors; Localization; Metal insulator transition

Indexed keywords

EID: 22244433207     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)02609-5     Document Type: Article

References (4)

1. M. Watanabe, Y. Ootuka, K.M. Itoh, E.E.N. Haller, Phys. Rev. B 58 (1998) 9851.
2. A.N. Ionov, R. Rentzsch, P. Fozooni, M.J. Lea, Phys. Stat. Sol. B 205 (1998) 257.
3. B.L. Altshuler, A.G. Aronov, in: A.L. Efros, M. Pollak (Eds.), Electron-Electron Interactions in Disordered Systems, Elsevier, Amsterdam, 1985, p. 86.
4. H. Fukuyama, Technical Report of ISSP, Ser. A No. 1445, June 1981.