Electrical conduction studies on Bi2Te3 thin films

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 563-570

  Sathyamoorthy, R ^a   Dheepa, J ^a   Subbarayan, A ^a  

^a KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

Author keywords

A1. Activation energy; A1. Barrier height; A1. Electrical conduction; A1. Interfacial state; A3. Thin films; B1. Bismuth telluride

Indexed keywords

ACTIVATION ENERGY; BISMUTH COMPOUNDS; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; INTERFACIAL ENERGY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; SPUTTERING; THERMOELECTRICITY;

BARRIER HEIGHT; BISMUTH TELLURIDE; ELECTRICAL CONDUCTION; INTERFACIAL STATE;

THIN FILMS;

EID: 22144495451     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.077     Document Type: Article

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