Characterization of Ge(Se1-xSx)2 series layered crystals grown by vertical Bridgman method

Journal of Crystal Growth

Volumn 281, Issue 2-4, 2005, Pages 377-383

  Wu, C C ^a   Ho, C H ^a   Wu, J Y ^a   Lin, S L ^a   Huang, Y S ^b  

^a NATIONAL DONG HWA UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

A1. Thermoreflectance; A2. Vertical Bridgman method; B1. Ge(Se 1 xSx)2

Indexed keywords

COMPOSITION; CRYSTAL GROWTH; CRYSTALLINE MATERIALS; INFRARED DEVICES; OPTICAL FIBERS; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SOLAR CELLS; STOICHIOMETRY; X RAY ANALYSIS;

CHALCOGENIDE MATERIALS; GE(SE1-XSX)2; THERMOREFLECTANCE (TR); VERTICAL BRIDGMAN METHOD;

GERMANIUM COMPOUNDS;

EID: 22144483443     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.04.001     Document Type: Article

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